MAHDI POURFATH PDF

Mahdi Pourfath. ORCID iD. Print view. Open a version of this ORCID record formatted for printing. List of computer science publications by Mahdi Pourfath. Ph.D, Vienna University of Technology, Electrical Engineering – Microelectronics . → , Sharif University of Technology, Electrical Engineering -.

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The optical transition matrix elements and the resulting selection rules were also derived. Mahdi Pourfath MSc Dr. He studied electrical engineering at the Sharif University of Technology, where he received the degree of Master of Science in Graphene, a one-atomic carbon sheet with a honeycomb structure, has attracted significant attention due to its unique physical properties.

We have shown that by appropriately selecting the gate-source and gate-drain spacer lengths we can improve not only the ambipolar behavior and static characteristics but also the dynamic characteristics of the device.

mehdi pourfath – Personal page – دانشکده مهندسی برق و کامپیوتر دانشگاه تهران

The results indicate that a tensile strain increases mobility, whereas a compressive strain reduces mobility. Visit our Beautiful Books page and find lovely books for kids, photography lovers and more. Our studies pave the way for improving the performance of TMD-based electronic devices by strain engineering. There is a good agreement between simulation and experimental results, indicating the validity of the model. Erasmus Langer Siegfried Selberherr.

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The Non-Equilibrium Green’s Function Method for Nanoscale Device Simulation

To achieve more realistic results it is necessary to extend the codes to include 3D geometries. We performed a comprehensive theoretical study of the optical properties of GNRs resulting in a general analytical expression for the linear optical conductivity for light polarized parallel to the ribbons axis by employing an orthogonal tight-binding model with nearest neighbor interaction.

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The energy conversion efficiency as a function of the incident photon energy and ribbon’s width is evaluated and compared to their nanotube counterparts.

Other books in this series. For dynamic response, it is also desirable to use methods based on non-QSA. Computational Single-Electronics Christoph Wasshuber. Hierarchical Plurfath Simulation Christoph Jungemann. Table of contents Review of quantum mechanics. Graphene, as the most prominent 2D material, is attractive for use in next-generation nanoelectronic devices because of its high carrier pourrfath.

Solid and dashed curves, respectively, denote the results for biaxial and uniaxial strain along the armchair direction.

His scientific interests include the numerical study of novel nanoelectronic devices. Based on this observed property, we have proposed monolayers of MoSe 2 and WSe 2 as excellent base materials for highly sensitive strain gauges. The absence of an energy gap, however, seriously jeopardizes the usage of this material mahci some important electronic applications, including digital circuits.

Their electronic properties exhibit a dependence on the ribbon direction and width.

Mahdi Pourfath

The electronic band-structure pourfagh GNRs depends on the nature of their edges, which can be zigzag or armchair. He joined the Institute for Microelectronics in Octoberwhere he received his doctoral degree in technical sciences in July and is currently employed as a post-doctoral researcher. Simulation results indicate the importance of the gate-source and gate-drain spacer lengths. Home Contact Us Help Free delivery worldwide.

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Optical transition matrix elements of graphene across the whole of the Brillouin zone. In short devices less than nm carrier transport through the device is nearly ballistic. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations mxhdi numerical methods for solving the kinetic equations at a reasonable computational time. Other 2D materials with a nonzero bandgap, such as single and few-layer transition metal dichalcogenides TMDsoffer promising electrical and optical properties for future electronic applications.

One of the many interesting properties of Pohrfath electrons in graphene are the drastic changes of the conductivity of graphene-based structures with the confinement of electrons. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented.

His scientific interests porfath quantum transport, simulation of carbon nanotubes and nanoelectronic devices. The direct band-gap and the tuneability of the band-gap with the GNRs width render these structures as mmahdi candidates for opto-electronic devices, especially for infrared applications, due to the relatively narrow band gap. We use cookies to give you the best possible experience.

In the next step we employed the non-equilibrium Green’s function formalism to perform a comprehensive study of photo detectors based on GNRs.