HF+ datasheet, cross reference, circuit and application notes in pdf format. Shenzhen Ping Sheng Electronics Co., Ltd. Part No. Description, SWITCHING REGULATOR APPLICATION. File Size, K / 2 Page. TS High Voltage NPN Transistor. 1/6. Version: D TO TO PRODUCT SUMMARY. BVCEO. V. BVCBO. V. IC. A. VCE(SAT).
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MJE Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
Internal schematic diagram multi-epitaxial planar tec 1. Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. It uses a 1. Please allow business days for a response. TO, Plastic Package Terminals: Silicon Triple Diffused Type? In this Agreement, words importing a singular number only shall include the plural and vice versa, and nf numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.
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They are particularly suited for and V applications in switch mode. Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Your request has been submitted for approval.
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They are particularly suited for and V switchmode applications such as Switching Regulato 1. Internal schematic diagram The 1. Absolute Maximum Ratings Symbol Parameter 1. Characteristic Symbol Ratings Unit Collector-base volta 1. Absolute Maximum Ratings Symbol Par 1.
50pcs MJE13003 13003 TO-92 Bipolar Transistors 1.5A 450V NPN new original
Suitable for V circuit mode, fluorescent lamp, electronic ballast. Subject to the foregoing, this Agreement shall be binding upon and inure to the benefit of 1303 parties, their successors and assigns. Finish – Ma 1.
The UTC A 1. It uses a Figure 1.
For switching power supply and other power switching circuit. High voltage capability,high speed switching,wide SOA.
13003 Datasheet, Equivalent, Cross Reference Search
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HF+ datasheet & applicatoin notes – Datasheet Archive
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BOM, Gerber, user manual, schematic, test procedures, etc. High Speed Switching Structure?
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Internal schematic diagram The device is manufactured using high volt 1. Inductive Switching Matrix 0. High voltage capability, high speed switching, wide soa, RoHS compliant. The 1003 Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto. Suitable for V circuit mode,fluorescent lamp,electronic ballast.
The transistor is subdivided into one group according to its DC current gain. Emitter General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting 13003 1. At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software. Licensee agrees that it shall not issue any press releases containing, nor advertise, reference, reproduce, use or display, ON Semiconductor’s name or any ON Semiconductor trademark without ON Semiconductor’s express prior written consent in each instance; provided, however, that Licensee may indicate that the Licensee Product is interoperable with ON Semiconductor Products in product documentation and collateral material for the Licensee Product.